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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 DESCRIPTION *With TO-220C package *Complement to type 2SB553 *Low collector saturation voltage APPLICATIONS *High current switching applications *Power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION * Absolute maximum ratings(Ta=25) SYMBOL VCBO VCEO VEBO IC IB B PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current TC=25 Open emitter Open base CONDITIONS VALUE 70 50 5 7 1 40 UNIT V V V A A Open collector PC Collector power dissipation Ta=25 1.5 150 -50~150 W Tj Tstg Junction temperature Storage temperature Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA; IB=0 IC=4A; IB=0.4A IC=4A; IB=0.4A VCB=70V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=1V IC=4A ; VCE=1V IE=0 ; VCB=10V;f=1MHz IC=1A ; VCE=4V 70 30 250 10 MIN 50 0.2 0.9 TYP. 2SD553 MAX UNIT V 0.4 1.2 30 50 240 V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IB1=- IB2=0.3A RL=10; VCC=30V 0.2 2.5 0.5 s s s hFE-1Classifications O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD553 Fig.2 Outline dimensions (unindicated tolerance:0.10mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD553 4 |
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